Infineon
FS770R08A6P2BBPSA1
Trans IGBT Module N-CH 750V 450A 654000mW Automotive 33-Pin HYBRIDD-1 Tray
PackageHYBRIDD-1
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Technical Specifications
Infineon FS770R08A6P2BBPSA1 technical specifications.
General
| Channel Type | N |
| Configuration | Hex |
| Maximum Collector-Emitter Voltage | 750V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 450A |
| Maximum Power Dissipation | 654000mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 175°C |
| Pin Count | 33 |
| Package/Case | HYBRIDD-1 |
Compliance
| RoHS | Yes with Exemption |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Infineon FS770R08A6P2BBPSA1 Datasheet
Download the complete datasheet for Infineon FS770R08A6P2BBPSA1 to view detailed technical specifications.
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