Infineon
FZ1000R33HE3BPSA1
Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-7
PackageModule
MountingChassis Mount
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Technical Specifications
Infineon FZ1000R33HE3BPSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
3.3kV
Collector Emitter Saturation Voltage
2.55V
Collector Emitter Voltage (VCEO)
2.55V
Collector-emitter Voltage-Max
3.1V
Input
Standard
Input Capacitance
190nF
Max Collector Current
1kA
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
9.6kW
Mount
Chassis Mount
NTC Thermistor
No
Package Quantity
2
Packaging
Tray
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FZ1000R33HE3BPSA1 Datasheet
Download the complete datasheet for Infineon FZ1000R33HE3BPSA1 to view detailed technical specifications.
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