Infineon
FZ1200R33KF2C
Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
PackageModule
Power14.5kW
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Technical Specifications
Infineon FZ1200R33KF2C technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
3.3kV
Collector Emitter Saturation Voltage
3.4V
Collector-emitter Voltage-Max
3.3kV
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Package Quantity
8
Power Dissipation
14.5kW
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Infineon FZ1200R33KF2C Datasheet
Download the complete datasheet for Infineon FZ1200R33KF2C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.