The FZ400R65KF1 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 6.3kV and a collector-emitter saturation voltage of 4.3V. It operates within a temperature range of -40°C to 125°C and has a power dissipation of 7.4kW. The device is available in a module package type and is not RoHS compliant.
PackageModule
Power7.4kW
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Technical Specifications
Infineon FZ400R65KF1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 6.3kV |
| Collector Emitter Saturation Voltage | 4.3V |
| Collector-emitter Voltage-Max | 6.3kV |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Package Quantity | 8 |
| Power Dissipation | 7.4kW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon FZ400R65KF1 Datasheet
Download the complete datasheet for Infineon FZ400R65KF1 to view detailed technical specifications.
No datasheet is available for this part.