N-Channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1700V collector-emitter voltage (V(BR)CES) and 840A continuous collector current (I(C)). This 5-pin module offers a maximum operating temperature of 150°C and a 3-terminal configuration with upper terminal positioning. It comprises a single IGBT element.
Quick Jump:
Technical Specifications
Infineon FZ600R17KE3HOSA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | UPPER |
| Pin Count | 5 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon FZ600R17KE3HOSA1 Datasheet
Download the complete datasheet for Infineon FZ600R17KE3HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.