N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. Features a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 1.2kA. Offers a low collector-emitter saturation voltage of 2.3V and an input capacitance of 49nF. Operates across a temperature range of -40°C to 150°C with a maximum power dissipation of 3.35kW. This chassis-mount module is RoHS compliant and supplied in tray packaging.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FZ600R17KE4HOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector-emitter Voltage-Max | 2.3V |
| Input | Standard |
| Input Capacitance | 49nF |
| Max Collector Current | 1.2kA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.35kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Tray |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FZ600R17KE4HOSA1 Datasheet
Download the complete datasheet for Infineon FZ600R17KE4HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.