N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V collector-emitter voltage (V(BR)CES) and a 1200A continuous collector current (I(C)). This module offers a maximum operating temperature of 150°C and a 5-pin configuration with 4 terminals positioned at the upper end. Designed with a single element, this power semiconductor component is suitable for high-power switching applications.
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Technical Specifications
Infineon FZ800R12KE3HOSA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Pin Count | 5 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon FZ800R12KE3HOSA1 Datasheet
Download the complete datasheet for Infineon FZ800R12KE3HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.