N-channel Power MOSFET featuring low on-resistance and high switching speed. Designed for high-efficiency power conversion applications, this device offers excellent thermal performance and robust reliability. Its advanced trench technology enables superior current handling capabilities and reduced conduction losses. Ideal for demanding power management solutions requiring fast and efficient switching.
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Technical Specifications
Infineon IAUT200N08S5N023ATMA1 technical specifications.
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IAUT200N08S5N023ATMA1 Datasheet
Download the complete datasheet for Infineon IAUT200N08S5N023ATMA1 to view detailed technical specifications.
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