The IDH10G65C6 is a silicon carbide rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a TO-220AC package and a maximum reverse voltage of 650V. The diode has a maximum power dissipation of 72W and is suitable for general purpose rectification applications.
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Technical Specifications
Infineon IDH10G65C6 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AC |
| Number of Elements | 1 |
| Diode Element Material | SILICON CARBIDE |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 650 |
| Power Dissipation-Max | 72 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IDH10G65C6 Datasheet
Download the complete datasheet for Infineon IDH10G65C6 to view detailed technical specifications.
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