650V Silicon Carbide Rectifier Diode, single phase, single element, designed for general-purpose rectification. Features a maximum operating temperature of 175°C and a minimum of -55°C, housed in a TO-247 package with three terminals. Maximum power dissipation is 150W, utilizing a Schottky diode element for efficient performance.
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Technical Specifications
Infineon IDW30G65C5XKSA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
| Diode Element Material | SILICON CARBIDE |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 650 |
| Power Dissipation-Max | 150 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IDW30G65C5XKSA1 Datasheet
Download the complete datasheet for Infineon IDW30G65C5XKSA1 to view detailed technical specifications.
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