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IGB01N120H2XT Datasheet | Bipolar Junction Transistors (BJT) | Infineon

IGB01N120H2XT

IGB01N120H2XT

Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

Semiconductors
Discrete Semiconductors

Semiconductors
Discrete Semiconductors
Transistors
Bipolar Junction Transistors (BJT)

PackageTO-263

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Technical Specifications

Infineon IGB01N120H2XT technical specifications.

General

Package/Case	TO-263
RoHS Compliant	Yes

Compliance

RoHS

Compliant

Datasheet

Infineon IGB01N120H2XT Datasheet

Download the complete datasheet for Infineon IGB01N120H2XT to view detailed technical specifications.

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