The IGW75N60T is a 600V insulated gate bipolar transistor with a maximum collector current of 150A. It features a TO-247 package and is designed for through-hole mounting. The device has a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. The IGW75N60T is RoHS compliant and is packaged in a rail/tube format with 240 units per package.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IGW75N60T technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Height | 5.21mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Collector Current | 150A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 428W |
| Mount | Through Hole |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Width | 21.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IGW75N60T Datasheet
Download the complete datasheet for Infineon IGW75N60T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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