The IHP10T120 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 16A. It is packaged in a TO-220-3 plastic package and is compliant with RoHS regulations. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 138W. It is suitable for use in high-power applications where a high voltage and current are required.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Infineon IHP10T120 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 138W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 115ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IHP10T120 Datasheet
Download the complete datasheet for Infineon IHP10T120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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