The IHW20N120R2 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a collector-emitter saturation voltage of 1.85V. It can handle a maximum collector current of 20A and a maximum power dissipation of 330W. The device is packaged in a TO-247-3 flange mount and is available in a rail/tube packaging configuration. The IHW20N120R2 operates over a temperature range of -40°C to 175°C and is compliant with RoHS regulations.
PackageTO-247-3
MountingThrough Hole
Power330W
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Technical Specifications
Infineon IHW20N120R2 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector-emitter Voltage-Max | 1.75V |
| Input Type | STANDARD |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 330W |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IHW20N120R2 Datasheet
Download the complete datasheet for Infineon IHW20N120R2 to view detailed technical specifications.
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