The IHW40N60RF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It is packaged in a TO-247-3 flange mount and has a maximum power dissipation of 305W. The device is RoHS compliant and meets the requirements of the Reach SVHC directive. It operates within a temperature range of -40°C to 175°C.
PackageTO-247-3
Power305W
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Technical Specifications
Infineon IHW40N60RF technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector-emitter Voltage-Max | 2.4V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 305W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 305W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IHW40N60RF Datasheet
Download the complete datasheet for Infineon IHW40N60RF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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