The IKA10N60T is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 600V and a maximum collector current of 11.7A. It is packaged in a TO-220-3 package and is designed for high-power applications. The transistor has a maximum power dissipation of 30W and operates within a temperature range of -40°C to 175°C. It is RoHS compliant and lead-free.
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| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Height | 9.25mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Collector Current | 11.7A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 30W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 115ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Weight | 0.211644oz |
| Width | 4.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKA10N60T to view detailed technical specifications.
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