N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and a maximum collector current of 40A. This surface-mount device features a TO-263 package, a maximum power dissipation of 166W, and operates across a temperature range of -40°C to 175°C. It offers a collector-emitter voltage (VCEO) of 600V and a reverse recovery time of 41ns. The component is RoHS compliant and REACH SVHC compliant.
PackageTO-263
MountingSurface Mount
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Technical Specifications
Infineon IKB20N60TATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 166W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Reverse Recovery Time | 41ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKB20N60TATMA1 Datasheet
Download the complete datasheet for Infineon IKB20N60TATMA1 to view detailed technical specifications.
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