N-channel Insulated Gate Bipolar Transistor (IGBT) chip for automotive applications. Features 600V collector-emitter voltage and 8A continuous collector current. Surface-mount DPAK package (TO-252AA) with 3 pins and tab, offering a maximum power dissipation of 75000mW. Operates across a wide temperature range from -40°C to 175°C.
PackageDPAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon IKD04N60RF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.26(Max)
Seated Plane Height (mm)
2.41(Max)
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
8A
Maximum Power Dissipation
75000mW
Typical Collector Emitter Saturation Voltage
2.1V
Min Operating Temperature
-40°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IKD04N60RF Datasheet
Download the complete datasheet for Infineon IKD04N60RF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.