The IKD04N60RFATMA1 is a 600V insulated gate bipolar transistor with a maximum collector current of 8A and a maximum power dissipation of 75W. It is packaged in a TO-252-3 surface mount package with a height of 2.41mm and a length of 6.73mm. The transistor operates over a temperature range of -40°C to 175°C and is compliant with RoHS standards. It features a reverse recovery time of 34ns and is part of the TrenchStop series from Infineon.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IKD04N60RFATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Type | STANDARD |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Collector Current | 8A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Reverse Recovery Time | 34ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKD04N60RFATMA1 Datasheet
Download the complete datasheet for Infineon IKD04N60RFATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.