The IKD06N60RAATMA1 is a 600V insulated gate bipolar transistor with a maximum collector current of 12A and a maximum power dissipation of 100W. It is packaged in a TO-252-3 surface mount package and is RoHS compliant. The transistor has a reverse recovery time of 68ns and is part of the TrenchStop series. It is suitable for use in a variety of applications, including power supplies and motor drives.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IKD06N60RAATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 12A |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Reverse Recovery Time | 68ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKD06N60RAATMA1 Datasheet
Download the complete datasheet for Infineon IKD06N60RAATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.