N-channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V collector-emitter breakdown voltage and a maximum collector current of 30A. Operates within a temperature range of -40°C to 175°C with a maximum power dissipation of 250W. Packaged in a TO-252-3 (DPAK) plastic package, this RoHS compliant component is supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
Power250W
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Technical Specifications
Infineon IKD15N60RATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Element Configuration | Single |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 250W |
| Reverse Recovery Time | 110ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKD15N60RATMA1 Datasheet
Download the complete datasheet for Infineon IKD15N60RATMA1 to view detailed technical specifications.
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