The IKW15N120H3 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 30A. It is packaged in a TO-247-3 flange mount package and has a maximum operating temperature of 175°C. The device is RoHS compliant and is suitable for use in high-power applications. The IGBT has a collector-emitter breakdown voltage of 1.2kV and a collector-emitter saturation voltage of 2.05V. It is also compliant with the standard package quantity of 240 units per rail/Tube packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IKW15N120H3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 21.1mm |
| Input Type | STANDARD |
| Length | 16.03mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 217W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 260ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| Width | 5.16mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKW15N120H3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
