The IKW15N120H3 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 30A. It is packaged in a TO-247-3 flange mount package and has a maximum operating temperature of 175°C. The device is RoHS compliant and is suitable for use in high-power applications. The IGBT has a collector-emitter breakdown voltage of 1.2kV and a collector-emitter saturation voltage of 2.05V. It is also compliant with the standard package quantity of 240 units per rail/Tube packaging.
PackageTO-247-3
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Technical Specifications
Infineon IKW15N120H3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 21.1mm |
| Input Type | STANDARD |
| Length | 16.03mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 217W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 260ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKW15N120H3 Datasheet
Download the complete datasheet for Infineon IKW15N120H3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.