N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter voltage (V(BR)CES) and an 80A continuous collector current (I(C)). This discrete semiconductor component is housed in a 3-terminal TO-247 plastic package. Designed for high-temperature operation, it supports a maximum operating temperature of 175°C. The single terminal position and one element configuration are standard for this type of transistor.
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Technical Specifications
Infineon IKW40N120H3FKSA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IKW40N120H3FKSA1 Datasheet
Download the complete datasheet for Infineon IKW40N120H3FKSA1 to view detailed technical specifications.
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