N-channel Insulated Gate Bipolar Transistor (IGBT) with a 1200V collector-emitter voltage (V(BR)CES) and 75A continuous collector current (I(C)). Features a TO-247 package for through-hole mounting, supporting a maximum power dissipation of 270W. Operates within a temperature range of -40°C to 150°C and is RoHS compliant.
PackageTO-247
MountingThrough Hole
Power270W
Quick Jump:
Technical Specifications
Infineon IKW40T120FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Halogen Free | Not Halogen Free |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Package Quantity | 240 |
| Power Dissipation | 270W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKW40T120FKSA1 Datasheet
Download the complete datasheet for Infineon IKW40T120FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
