N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a continuous collector current rating of 80A and a collector-emitter voltage rating of 650V. This 3-terminal device utilizes a TO-247 package for efficient thermal management.
Quick Jump:
Technical Specifications
Infineon IKW75N65EL5XKSA1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IKW75N65EL5XKSA1 Datasheet
Download the complete datasheet for Infineon IKW75N65EL5XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.