N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a continuous collector current rating of 80A and a collector-emitter voltage rating of 650V. This 3-terminal device utilizes a TO-247 package for efficient thermal management.
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| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IKW75N65EL5XKSA1 to view detailed technical specifications.
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