N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter voltage (V(BR)CES) and a 150A continuous collector current (I(C)). This discrete semiconductor component is housed in a TO-247 package with 4 terminals, designed for single terminal positioning. It operates reliably across a wide temperature range, with a minimum operating temperature of -40°C. The single element construction is optimized for high-power switching applications.
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Technical Specifications
Infineon IKY75N120CH3XKSA1 technical specifications.
General
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IKY75N120CH3XKSA1 Datasheet
Download the complete datasheet for Infineon IKY75N120CH3XKSA1 to view detailed technical specifications.
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