Infineon
IPA030N10N3G
Power Field-Effect Transistor, 79A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
PackageTO-220-3
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Technical Specifications
Infineon IPA030N10N3G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 79A |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 14.8nF |
| Length | 10.65mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 112ns |
| Turn-On Delay Time | 42ns |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA030N10N3G Datasheet
Download the complete datasheet for Infineon IPA030N10N3G to view detailed technical specifications.
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