N-channel power MOSFET featuring 60V drain-source breakdown voltage and 84A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3.2mΩ drain-source resistance. Designed for high-power applications, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 41W. The component is packaged in a TO-220-3 configuration and is RoHS and REACH SVHC compliant.
PackageTO-220-3
PolarityN-CHANNEL
Power41W
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Technical Specifications
Infineon IPA032N06N3GXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 13nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 41W |
| Rds On Max | 3.2mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 35ns |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA032N06N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPA032N06N3GXKSA1 to view detailed technical specifications.
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