N-channel Power MOSFET featuring 100V drain-source voltage and 64A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 4.5mΩ on-state resistance and 3.9mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 175°C with a maximum power dissipation of 39W. Key switching characteristics include a 25ns turn-on delay and 15ns fall time. This component is lead-free, halogen-free, and RoHS compliant.
PackageTO-220-3
MountingThrough Hole
Power39W
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Technical Specifications
Infineon IPA045N10N3GXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 8.41nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 4.5mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 39W |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA045N10N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPA045N10N3GXKSA1 to view detailed technical specifications.
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