N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 100V and continuous drain current of 28A. Features low on-resistance of 18mΩ at 10V, typical gate charge of 19nC, and input capacitance of 1350pF. Housed in a 3-pin TO-220FP package with through-hole mounting, this single-element transistor operates from -55°C to 175°C with a maximum power dissipation of 30W.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Infineon IPA180N10N3 G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.5 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 16 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 28A |
| Maximum Drain Source Resistance | 18@10VmOhm |
| Typical Gate Charge @ Vgs | 19@10VnC |
| Typical Gate Charge @ 10V | 19nC |
| Typical Input Capacitance @ Vds | 1350@50VpF |
| Maximum Power Dissipation | 30000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPA180N10N3 G Datasheet
Download the complete datasheet for Infineon IPA180N10N3 G to view detailed technical specifications.
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