N-Channel Power MOSFET, 600V breakdown voltage, 6.8A continuous drain current, and 520mΩ Rds On. Features include 16ns fall time, 17ns turn-on delay, and 74ns turn-off delay. Operates from -55°C to 150°C with 30W power dissipation. Packaged in TO-220-3, this silicon, metal-oxide semiconductor FET is RoHS compliant.
PackageTO-220-3
PolarityN-CHANNEL
Power30W
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Technical Specifications
Infineon IPA60R520CP technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 520mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 630pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA60R520CP Datasheet
Download the complete datasheet for Infineon IPA60R520CP to view detailed technical specifications.
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