The IPA65R099C6XKSA1 is a 650V power MOSFET from Infineon with a maximum continuous drain current of 38A. It features a TO-220-3 package and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The MOSFET has a maximum power dissipation of 35W and a maximum dual supply voltage of 650V.
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon IPA65R099C6XKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.78nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 99mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 77ns |
| Turn-On Delay Time | 10.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA65R099C6XKSA1 Datasheet
Download the complete datasheet for Infineon IPA65R099C6XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
