INFINEON

IPB017N06N3GATMA1

Datasheet

N-Ch MOSFET, 60V, 180A, 1.7mR, TO-263-7, SM

Infineon

IPB017N06N3GATMA1

Name: IPB017N06N3GATMA1 Infineon
Brand: Infineon
SKU: IPB017N06N3GATMA1

N-Ch MOSFET, 60V, 180A, 1.7mR, TO-263-7, SM

N-Channel Power MOSFET, 60V Vds, 180A continuous drain current, and 1.7mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-263-7 package for surface mounting, offering a maximum power dissipation of 250W and operating temperature range from -55°C to 175°C. Key switching characteristics include a 41ns turn-on delay, 24ns fall time, and 79ns turn-off delay. It is RoHS compliant and halogen-free.

PackageTO-263-7

MountingSurface Mount

Power250W

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Technical Specifications

Infineon IPB017N06N3GATMA1 technical specifications.

General

Package/Case	TO-263-7
Continuous Drain Current (ID)	180A
Drain to Source Voltage (Vdss)	60V
Fall Time	24ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	23nF
Lead Free	Contains Lead
Max Dual Supply Voltage	60V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	250W
Mount	Surface Mount
Number of Elements	1
Packaging	Tape and Reel
Power Dissipation	250W
Rds On Max	1.7mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	79ns
Turn-On Delay Time	41ns