N-channel Power MOSFET featuring 100V drain-source voltage and 31A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0017 ohms. Designed with a single element and six terminals, it is housed in a TO-263 package. Operating temperature range spans from -55°C to 150°C.
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Technical Specifications
Infineon IPB017N10N5LFATMA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB017N10N5LFATMA1 Datasheet
Download the complete datasheet for Infineon IPB017N10N5LFATMA1 to view detailed technical specifications.
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