Infineon
IPB019N08N3GXT
Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
PackageTO-263
Quick Jump:
Technical Specifications
Infineon IPB019N08N3GXT technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 80V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon IPB019N08N3GXT Datasheet
Download the complete datasheet for Infineon IPB019N08N3GXT to view detailed technical specifications.
No datasheet is available for this part.