Infineon
IPB020N04NGATMA1
Power Field-Effect Transistor, 140A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN
MountingSurface Mount
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Technical Specifications
Infineon IPB020N04NGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 140A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 7.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB020N04NGATMA1 Datasheet
Download the complete datasheet for Infineon IPB020N04NGATMA1 to view detailed technical specifications.
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