N-channel Power MOSFET featuring 100V drain-source voltage and a low on-resistance of 0.002 ohms. This single-element silicon device offers a continuous drain current capability of 120A. Encased in a TO-263AB (D2PAK-3/2) green plastic package, it is designed for high-power applications.
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Technical Specifications
Infineon IPB020N10N5ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB020N10N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPB020N10N5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.