N-channel MOSFET transistor featuring 40V drain-source breakdown voltage and 90A continuous drain current. Offers low on-resistance of 1.8 mΩ at 10V gate-source voltage, with a maximum of 11.8 mΩ. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 167W. Packaged in a TO-263-3 case and supplied on tape and reel.
PackageTO-263-3
PolarityN-CHANNEL
Power167W
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Technical Specifications
Infineon IPB022N04LG technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
2.2mR
Drain to Source Voltage (Vdss)
100V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
5.6nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
167W
Radiation Hardening
No
Rds On Max
11.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
1.2V
Turn-Off Delay Time
66ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPB022N04LG Datasheet
Download the complete datasheet for Infineon IPB022N04LG to view detailed technical specifications.
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