The IPB022N04LGATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 90A and a drain to source voltage of 40V. The device is packaged in a TO-263-3 case and is available in tape and reel packaging. It is compliant with RoHS regulations and features a maximum power dissipation of 167W.
PackageTO-263-3
MountingSurface Mount
Power167W
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Technical Specifications
Infineon IPB022N04LGATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 13nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 167W |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB022N04LGATMA1 Datasheet
Download the complete datasheet for Infineon IPB022N04LGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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