N-Channel Power MOSFET, 100V Vds, 180A continuous drain current, and 2.5mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-263 package for surface mounting and offers a maximum power dissipation of 300W. Operating temperature range spans from -55°C to 175°C, with turn-on delay time of 34ns and turn-off delay time of 84ns. Halogen-free and RoHS compliant.
PackageTO-263
MountingSurface Mount
Power300W
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Technical Specifications
Infineon IPB025N10N3GATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 14.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 84ns |
| Turn-On Delay Time | 34ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB025N10N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB025N10N3GATMA1 to view detailed technical specifications.
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