The IPB027N10N3G is a 900V 120A power MOSFET from Infineon, packaged in a TO-263-3. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is RoHS compliant and lead free. It has a maximum power dissipation of 35W and a maximum Rds On of 340mR. The package quantity is 1 and it is packaged in tape and reel.
PackageTO-263-3
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Technical Specifications
Infineon IPB027N10N3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 340mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 84ns |
| Turn-On Delay Time | 34ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB027N10N3G Datasheet
Download the complete datasheet for Infineon IPB027N10N3G to view detailed technical specifications.
No datasheet is available for this part.
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