N-Channel Power MOSFET, 100V Vds, 120A continuous drain current, and 2.7mΩ Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-263 package for surface mounting, offering a maximum power dissipation of 300W and operating temperature range of -55°C to 175°C. Key electrical characteristics include 14.8nF input capacitance, 28ns fall time, 34ns turn-on delay, and 84ns turn-off delay. This component is RoHS compliant and Halogen Free.
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| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 14.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 2.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 84ns |
| Turn-On Delay Time | 34ns |
| RoHS | Compliant |
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