INFINEON

IPB027N10N3GATMA1

Datasheet

100V 120A N-Ch MOSFET, 2.7mR Rds(on), TO-263

Infineon

IPB027N10N3GATMA1

Name: IPB027N10N3GATMA1 Infineon
Brand: Infineon
SKU: IPB027N10N3GATMA1

100V 120A N-Ch MOSFET, 2.7mR Rds(on), TO-263

N-Channel Power MOSFET, 100V Vds, 120A continuous drain current, and 2.7mΩ Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-263 package for surface mounting, offering a maximum power dissipation of 300W and operating temperature range of -55°C to 175°C. Key electrical characteristics include 14.8nF input capacitance, 28ns fall time, 34ns turn-on delay, and 84ns turn-off delay. This component is RoHS compliant and Halogen Free.

PackageTO-263

MountingSurface Mount

Power300W

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Technical Specifications

Infineon IPB027N10N3GATMA1 technical specifications.

General

Package/Case	TO-263
Continuous Drain Current (ID)	120A
Drain to Source Resistance	2.3mR
Drain to Source Voltage (Vdss)	100V
Fall Time	28ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	14.8nF
Lead Free	Contains Lead
Max Dual Supply Voltage	100V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Surface Mount
Number of Elements	1
On-State Resistance	2.7mR
Package Quantity	1000
Packaging	Tape and Reel
Power Dissipation	300W
Radiation Hardening	No
Rds On Max	2.7mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	84ns
Turn-On Delay Time	34ns