N-channel silicon power MOSFET featuring a low on-resistance of 0.0032 ohms and a drain-source voltage rating of 100V. This single-element transistor supports a continuous drain current of 166A and is housed in a TO-263 package with 6 terminals. Designed for high-power applications, it operates across a wide temperature range from -55°C to 150°C.
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Technical Specifications
Infineon IPB032N10N5ATMA1 technical specifications.
General
| Number of Terminals | 6 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB032N10N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPB032N10N5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.