N-Channel Power MOSFET, 60V Vdss, 90A continuous drain current, and 3.4mR Rds(on) max. Features a TO-263-3 (D2PAK) surface-mount package, 167W power dissipation, and operates from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET offers fast switching with a 13ns fall time and 25ns turn-on delay. RoHS compliant and halogen-free.
PackageTO-263-3
MountingSurface Mount
Power167W
Quick Jump:
Technical Specifications
Infineon IPB034N06L3GATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 13nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 3.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 167W |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB034N06L3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB034N06L3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
