Automotive N-channel Power MOSFET, 120V drain-source voltage, 180A continuous drain current, and 3.6 mOhm drain-source resistance at 10V. Features OptiMOS process technology and a single quint source configuration. Housed in a 7-pin D2PAK (TO-263) surface-mount plastic package with gull-wing leads, measuring 10.31mm max length and 9.45mm max width. Operates from -55°C to 175°C with a maximum power dissipation of 300W.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon IPB036N12N3 G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 7 |
| PCB | 6 |
| Tab | Tab |
| Package Length (mm) | 10.31(Max) |
| Package Width (mm) | 9.45(Max) |
| Package Height (mm) | 4.57(Max) |
| Seated Plane Height (mm) | 4.82(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quint Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 120V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 180A |
| Maximum Drain Source Resistance | 3.6@10VmOhm |
| Typical Gate Charge @ Vgs | 158@10VnC |
| Typical Gate Charge @ 10V | 158nC |
| Typical Input Capacitance @ Vds | 10400@60VpF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPB036N12N3 G Datasheet
Download the complete datasheet for Infineon IPB036N12N3 G to view detailed technical specifications.
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