N-channel power MOSFET featuring 120V drain-source voltage and 120A continuous drain current. Offers a low 3.8mΩ on-state resistance and 3.2mΩ drain-to-source resistance. Designed for surface mounting in a TO-263AB (D2PAK-3) package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Key switching characteristics include a 35ns turn-on delay and 21ns fall time. RoHS compliant and halogen-free.
MountingSurface Mount
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Technical Specifications
Infineon IPB038N12N3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 120A |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 10.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 120V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| On-State Resistance | 3.8mR |
| Package Quantity | 1000 |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB038N12N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB038N12N3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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