N-channel MOSFET transistor designed for surface mounting in a TO-263 package. Features a continuous drain current of 80A and a drain-to-source breakdown voltage of 40V. Offers a low on-resistance of 3.9mΩ at a gate-source voltage of 10V, with a threshold voltage of 1.2V. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 94W. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 6ns.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power94W
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Technical Specifications
Infineon IPB039N04LG technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.1nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Radiation Hardening | No |
| Rds On Max | 3.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB039N04LG Datasheet
Download the complete datasheet for Infineon IPB039N04LG to view detailed technical specifications.
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