N-channel MOSFET, surface mount, TO-263 package. Features 40V drain-to-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 4.1mΩ (typ.) and 3.8mΩ (max.). Operates with a gate-source voltage up to 20V, exhibiting fast switching times with turn-on delay of 16ns and fall time of 4.8ns. Maximum power dissipation is 150W, with an operating temperature range of -55°C to 175°C. RoHS compliant.
PackageTO-263
Voltage40V
Current80A
MountingSurface Mount
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Technical Specifications
Infineon IPB041N04NG technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 80A |
| Current | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.4nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Rds On Max | 3.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 16ns |
| Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB041N04NG Datasheet
Download the complete datasheet for Infineon IPB041N04NG to view detailed technical specifications.
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