The IPB042N10N3GE818XT is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 214W and a continuous drain current of 100A. The device features a drain to source resistance of 4.2mR and a drain to source voltage of 100V. It is packaged in a D2PAK package and is available in quantities of 1000 on tape and reel.
PackageD2PAK
PolarityN-CHANNEL
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Technical Specifications
Infineon IPB042N10N3GE818XT technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Series | IPB042N10 |
| Turn-Off Delay Time | 48ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB042N10N3GE818XT Datasheet
Download the complete datasheet for Infineon IPB042N10N3GE818XT to view detailed technical specifications.
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