Automotive N-channel Power MOSFET, surface mountable in a D2PAK (TO-263) package. Features 75V drain-source voltage, 80A continuous drain current, and low 4.9mOhm drain-source resistance at 10V. OptiMOS process technology ensures efficient performance with a typical gate charge of 51nC. Operating temperature range from -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon IPB049NE7N3 G technical specifications.
General
Package Family Name
TO-263
Package/Case
D2PAK
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.31(Max)
Package Width (mm)
9.45(Max)
Package Height (mm)
4.57(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
75V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
80A
Maximum Drain Source Resistance
4.9@10VmOhm
Typical Gate Charge @ Vgs
51@10VnC
Typical Gate Charge @ 10V
51nC
Typical Input Capacitance @ Vds
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPB049NE7N3 G Datasheet
Download the complete datasheet for Infineon IPB049NE7N3 G to view detailed technical specifications.
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